US 11,837,468 B2
Stacked structure including semiconductor structure and method of manufacturing the same
Mann Ho Cho, Seoul (KR); Kwang Sik Jeong, Seoul (KR); Hyeon Sik Kim, Gumi-si (KR); Hyun Eok Shin, Gwacheon-si (KR); Byung Soo So, Yongin-si (KR); and Ju Hyun Lee, Seongnam-si (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Seoul (KR); and INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY, Yongin-si (KR)
Filed by Samsung Display Co., LTD., Yongin-si (KR); and Industry-Academic Cooperation Foundation, Yonsei University, Seoul (KR)
Filed on Sep. 8, 2021, as Appl. No. 17/469,279.
Claims priority of application No. 10-2020-0139177 (KR), filed on Oct. 26, 2020.
Prior Publication US 2022/0130667 A1, Apr. 28, 2022
Int. Cl. H01L 21/02 (2006.01)
CPC H01L 21/02491 (2013.01) [H01L 21/0254 (2013.01); H01L 21/02422 (2013.01); H01L 21/02502 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method of manufacturing a stacked structure, comprising:
forming a first metal buffer layer including crystal grains on a base substrate;
forming a second metal buffer material layer on the first metal buffer layer; and
crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein
the second metal buffer material layer includes crystal grains,
a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer,
the forming of the second metal buffer material layer includes crystalizing the second metal buffer material layer by a temperature treatment process, and
the forming of the second metal buffer layer includes crystallizing the second metal buffer material layer by the temperature treatment process.