US 11,837,466 B2
Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium
Kimihiko Nakatani, Toyama (JP)
Assigned to KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed by KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed on Aug. 6, 2021, as Appl. No. 17/396,262.
Application 17/396,262 is a continuation of application No. 16/817,563, filed on Mar. 12, 2020, granted, now 11,158,501.
Claims priority of application No. 2019-049691 (JP), filed on Mar. 18, 2019.
Prior Publication US 2021/0366706 A1, Nov. 25, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); C23C 16/04 (2006.01); C23C 16/34 (2006.01)
CPC H01L 21/02312 (2013.01) [C23C 16/04 (2013.01); C23C 16/345 (2013.01); H01L 21/0217 (2013.01); H01L 21/02211 (2013.01); H01L 21/02271 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, comprising:
(a) supplying a silicon- and ligand-containing gas to a substrate having a surface on which a first base and a second base are exposed to thereby adsorb silicon contained in the silicon- and ligand-containing gas on a surface of one of the first base and the second base;
(b) supplying a fluorine-containing gas to the substrate after the silicon is adsorbed on the surface of the one of the first base and the second base, to thereby cause the silicon adsorbed on the surface of the one of the first base and the second base to react with the fluorine-containing gas to modify the surface of the one of the first base and the second base to be F-terminated; and
(c) supplying a film-forming gas to the substrate after the surface of the one of the first base and the second base is modified, to thereby form a film on a surface of the other of the first base and the second base, which is different from the one of the first base and the second base.