US 11,837,465 B2
Deposition method
Jun Ogawa, Yamanashi (JP); and Takayuki Karakawa, Yamanashi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Sep. 8, 2021, as Appl. No. 17/468,875.
Claims priority of application No. 2020-155660 (JP), filed on Sep. 16, 2020.
Prior Publication US 2022/0084811 A1, Mar. 17, 2022
Int. Cl. C23C 16/34 (2006.01); H01L 21/02 (2006.01); H01J 37/32 (2006.01); C23C 16/458 (2006.01); C23C 16/455 (2006.01); C23C 16/511 (2006.01)
CPC H01L 21/0217 (2013.01) [C23C 16/345 (2013.01); C23C 16/4584 (2013.01); C23C 16/45538 (2013.01); C23C 16/45553 (2013.01); C23C 16/511 (2013.01); H01J 37/3244 (2013.01); H01L 21/0228 (2013.01); H01L 21/02274 (2013.01); H01J 37/32724 (2013.01); H01J 2237/20214 (2013.01); H01J 2237/332 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A deposition method for embedding a SiN film in a recess formed on a surface of a substrate, the deposition method comprising:
(a) activating and supplying a first process gas containing NH3 to the surface of the substrate to cause NHx groups to adsorb on the surface of the substrate, where x is 1 or 2;
(b) supplying a silicon-containing gas to the surface of the substrate on which the NHx groups are adsorbed to cause the silicon-containing gas to adsorb on the NHx groups;
(c) repeating (a) and (b) multiple times until a first SiN film is conformally deposited in the recess;
(d) activating and supplying a second process gas containing N2 to the surface of the substrate on which the NHx groups are adsorbed to replace the NHx groups at a top of the recess with N groups;
(e) activating and supplying the first process gas to the surface of the substrate to cause the NHx groups to absorb on the surface of the substrate;
(f) supplying the silicon-containing gas to the surface of the substrate on which the NHx groups absorb to cause the silicon-containing gas to absorb on the NHx groups; and
(g) repeating (e) and (f) multiple times until a second SiN film is deposited at a bottom of the recess such that the second SiN film is thicker than the first SiN film,
wherein (d) and (g) are repeated multiple times after performing (c).