US 11,837,450 B2
Sputtering target for magnetic recording medium, and magnetic thin film
Takashi Kosho, Ibaraki (JP)
Assigned to JX Metals Corporation, Tokyo (JP)
Appl. No. 16/077,663
Filed by JX Nippon Mining & Metals Corporation, Tokyo (JP)
PCT Filed Jan. 4, 2017, PCT No. PCT/JP2017/000022
§ 371(c)(1), (2) Date Aug. 13, 2018,
PCT Pub. No. WO2017/141558, PCT Pub. Date Aug. 24, 2017.
Claims priority of application No. 2016-030489 (JP), filed on Feb. 19, 2016.
Prior Publication US 2019/0040517 A1, Feb. 7, 2019
Int. Cl. H01J 37/34 (2006.01); C23C 14/34 (2006.01); G11B 5/65 (2006.01); G11B 5/851 (2006.01); H01F 10/14 (2006.01); H01F 41/18 (2006.01); C23C 14/06 (2006.01)
CPC H01J 37/3429 (2013.01) [C23C 14/06 (2013.01); C23C 14/3414 (2013.01); G11B 5/65 (2013.01); H01F 10/14 (2013.01); C23C 14/34 (2013.01); G11B 5/851 (2013.01); H01F 41/18 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A sputtering target consisting of 0.1 to 5 mol % of one or more oxides selected from the group consisting of FeO, Fe3O4, K2O, Na2O, PbO, and ZnO as a low-viscosity oxide, 1 to 50 mol % of boron carbide as a non-magnetic phase, 1 to 30 mol % of one or more elements selected from the group consisting of Ga, Ge, Ir, Re, Rh, and Zn, 5 to 70 mol % of Pt, and the remainder being Fe, wherein the sputtering target is a sintered body.