CPC H01J 37/32862 (2013.01) [B08B 7/0035 (2013.01); C23C 16/4405 (2013.01); H01J 37/32449 (2013.01); H01J 37/32724 (2013.01); H01J 2237/335 (2013.01); H01J 2237/3321 (2013.01)] | 22 Claims |
1. A method, comprising:
(a) cleaning a surface of a substrate support having a bulk layer disposed thereon, the substrate support disposed in a processing environment configured to process substrates, wherein cleaning includes forming a plasma at a high temperature from a cleaning gas mixture, the cleaning gas mixture comprising a fluorine containing gas and oxygen;
(b) removing oxygen radicals from the processing environment at the high temperature with a treatment plasma formed from a treatment gas mixture, the treatment gas mixture comprising the fluorine containing gas; and
(c) repairing an interface of the substrate support and the bulk layer at the high temperature with a post-treatment plasma, the post-treatment plasma formed from a post-treatment gas mixture including a nitrogen containing gas, wherein the high temperature is greater than or equal to about 500 degrees Celsius.
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