US 11,837,442 B2
Plasma processing apparatus and substrate supporter
Eitaro Kataoka, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed on Feb. 24, 2022, as Appl. No. 17/679,518.
Claims priority of application No. 2021-029021 (JP), filed on Feb. 25, 2021.
Prior Publication US 2022/0270854 A1, Aug. 25, 2022
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/3244 (2013.01) [H01J 37/32568 (2013.01); H01J 37/32715 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A plasma processing apparatus comprising:
a process container;
an electrode arranged inside the process container and applied with desired high frequency power;
a member having the electrode; and
an embedded member arranged in the member,
wherein the embedded member is composed of:
a first member formed with one or more outer flow paths on an outer periphery of the embedded member; and
a second member formed with one or more inner flow paths connected to the one or more outer flow paths by joining with the first member, and
wherein the one or more outer flow paths and the one or more inner flow paths communicate with each other.