US 11,834,742 B2
Method of deposition and method of fabricating electronic device using the same
Woo-Hee Kim, Siheung (KR); Jinseon Lee, Jeonju (KR); Jeong-Min Lee, Ansan (KR); Daehyun Kim, Icheon (KR); and Changhan Kim, Icheon (KR)
Assigned to SK hynix Inc., Icheon (KR); and Industry-University Cooperation Foundation Hanyang University ERICA Campus, Ansan (KR)
Filed by SK hynix Inc., Icheon (KR); and Industry-University Cooperation Foundation Hanyang University ERICA Campus, Ansan (KR)
Filed on Jan. 28, 2022, as Appl. No. 17/588,134.
Claims priority of application No. 10-2021-0013344 (KR), filed on Jan. 29, 2021.
Prior Publication US 2022/0243330 A1, Aug. 4, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/00 (2006.01); C23C 16/455 (2006.01); C23C 16/30 (2006.01); C23C 16/40 (2006.01)
CPC C23C 16/45553 (2013.01) [C23C 16/303 (2013.01); C23C 16/402 (2013.01); C23C 16/45536 (2013.01)] 26 Claims
OG exemplary drawing
 
1. A deposition method comprising:
providing a structure, which comprises a silicon oxide portion and a silicon nitride portion that have different surface characteristics from each other; and
performing an atomic layer deposition (ALD) process in a reactor provided with the structure to selectively form a silicon oxide layer on the silicon oxide portion,
wherein the ALD process comprises:
a first supply step of supplying a silicon precursor into the reactor to selectively adsorb the silicon precursor to a surface of the silicon oxide portion;
a first purge step of purging the reactor;
a second supply step of supplying an inhibitor material into the reactor to selectively adsorb the inhibitor material to a surface of the silicon nitride portion;
a second purge step of purging the reactor;
a third supply step of supplying an oxygen-containing source into the reactor; and
a third purge step of purging the reactor.