US 11,834,738 B2
Sputtering apparatus and method of fabricating magnetic memory device using the same
Joonmyoung Lee, Gwacheon-si (KR); Whankyun Kim, Seoul (KR); Eunsun Noh, Yongin-si (KR); Jeong-heon Park, Hwaseong-si (KR); and Junho Jeong, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Sep. 29, 2022, as Appl. No. 17/956,281.
Application 17/956,281 is a continuation of application No. 16/856,539, filed on Apr. 23, 2020, granted, now 11,535,930.
Claims priority of application No. 10-2019-0113431 (KR), filed on Sep. 16, 2019.
Prior Publication US 2023/0013146 A1, Jan. 19, 2023
Int. Cl. C23C 14/54 (2006.01); C23C 14/00 (2006.01); G11B 5/851 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01)
CPC C23C 14/541 (2013.01) [C23C 14/0057 (2013.01); G11B 5/851 (2013.01); H10B 61/00 (2023.02); H10N 50/01 (2023.02)] 7 Claims
OG exemplary drawing
 
1. A method of fabricating a magnetic memory device, the method comprising:
forming a first magnetic metal layer on a substrate;
forming a non-magnetic metal oxide layer on the first magnetic metal layer using a first sputtering process to keep the substrate at or above a room temperature; and
forming a second magnetic metal layer on the non-magnetic metal oxide layer using a second sputtering process to cool the substrate to a temperature of 50K or less,
wherein the first sputtering process uses a first inert gas having a first evaporation point and the second sputtering process uses a second inert gas having a second evaporation point lower than the first evaporation point,
wherein the first inert gas is provided in a chamber, and
wherein the second sputtering process uses at least one of a plurality of sputter guns having a nozzle hole configured to spray the second inert gas in the chamber.