US 12,490,507 B2
Different dimensions across active region for stronger via to backside power rail
Ruilong Xie, Niskayuna, NY (US); Albert M. Chu, Nashua, NH (US); Carl Radens, LaGrangeville, NY (US); and Brent A. Anderson, Jericho, VT (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Sep. 12, 2022, as Appl. No. 17/931,319.
Prior Publication US 2024/0088146 A1, Mar. 14, 2024
Int. Cl. H10D 84/85 (2025.01); H01L 23/528 (2006.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01)
CPC H10D 84/85 (2025.01) [H01L 23/5286 (2013.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 62/121 (2025.01); H10D 84/0167 (2025.01); H10D 84/0186 (2025.01); H10D 84/038 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first nanodevice comprised of a plurality of first transistors, and a second nanodevice comprised of a plurality of second transistors, wherein the second nanodevice is located adjacent to and parallel to the first nanodevice; and
the first nanodevice includes a first section, a second section, and a third section, wherein the second section of the first nanodevice is located between the first section and the third section of the first nanodevice, and wherein the second section of the first nanodevice defines a cut-out facing the second section of the second nanodevice;
the second nanodevice includes a first section, a second section, and a third section, wherein the second section of the second nanodevice is located between the first section and the third section of the second nanodevice, and wherein the second section of the second nanodevice defines a cut-out facing the second section of the first nanodevice;
wherein the first section of the first nanodevice and the first section of the second nanodevice are spaced apart from each other by a first distance, wherein the second section of the first nanodevice and the second section of the second nanodevice are spaced apart from each other by a second distance, wherein the third section of the first nanodevice and the third section of the second nanodevice are spaced apart from each other by a third distance, wherein the second distance is greater than the first distance, wherein the first distance is substantially equal to the third distance.