US 12,490,503 B2
Voltage regulator having variable output capacitance and methods for forming the same
Kuo-Pin Chang, Zhubei (TW); Chien Hung Liu, Hsinchu (TW); Yu-Wei Ting, Taipei (TW); and Kuo-Ching Huang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on May 16, 2023, as Appl. No. 18/317,986.
Prior Publication US 2024/0387516 A1, Nov. 21, 2024
Int. Cl. H10D 84/80 (2025.01); H01L 23/34 (2006.01); H01L 23/373 (2006.01); H01L 23/522 (2006.01); H02M 1/00 (2006.01); H02M 3/157 (2006.01); H10D 84/83 (2025.01)
CPC H10D 84/811 (2025.01) [H01L 23/345 (2013.01); H01L 23/373 (2013.01); H01L 23/5226 (2013.01); H02M 1/0012 (2021.05); H02M 1/0025 (2021.05); H02M 3/157 (2013.01); H10D 84/83 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A device structure comprising a voltage regulator circuit, wherein the voltage regulator circuit comprises:
a first semiconductor die including a pulse width modulation (PWM) circuit comprising a first set of field effect transistors located on a first semiconductor substrate and connected to a PWM voltage output node at which a pulsed voltage output is generated; and
a series connection of an inductor and a parallel connection circuit, the parallel connection circuit including a parallel connection of capacitor-switch assemblies,
wherein:
a first end node of the series connection is connected to the PWM voltage output node;
a second end node of the series connection is connected to electrical ground;
each of the capacitor-switch assemblies comprises a respective series connection of a respective capacitor and a respective switch; and
each switch within the capacitor-switch assemblies is located within the first semiconductor die.