US 12,490,501 B2
Vertically stacked cascode bipolar junction transistor (BJT) pair sensor
Alexander Reznicek, Troy, NY (US); and Bahman Hekmatshoartabari, White Plains, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Feb. 16, 2022, as Appl. No. 17/672,941.
Prior Publication US 2023/0260990 A1, Aug. 17, 2023
Int. Cl. H10D 84/60 (2025.01); H10D 10/01 (2025.01); H10D 10/40 (2025.01); H10D 64/27 (2025.01)
CPC H10D 84/615 (2025.01) [H10D 10/051 (2025.01); H10D 10/40 (2025.01); H10D 64/281 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A sensor device comprising:
a vertically stacked cascode bipolar junction transistor pair comprising:
a resistor;
an NPN bipolar junction transistor connected to the resistor; and
a dual-base NPN bipolar junction transistor comprising a sensing base and a first sensing surface connected to the sensing base; and
a first trench having a first sidewall, wherein a portion of the first sidewall is provided by the first sensing surface,
wherein the NPN bipolar junction transistor and the dual-base NPN bipolar junction transistor are stacked vertically along the first trench.