| CPC H10D 64/117 (2025.01) [H01L 23/3171 (2013.01); H10D 30/475 (2025.01); H10D 62/8503 (2025.01)] | 19 Claims |
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1. A nitride-based semiconductor device, comprising:
a first nitride-based semiconductor layer;
a second nitride-based semiconductor layer disposed on the first nitride-based semiconductor layer and having a bandgap greater than a bandgap of the first nitride-based semiconductor layer;
a source electrode and a drain electrode disposed above the second nitride-based semiconductor layer;
a gate structure disposed above the second nitride-based semiconductor layer and in a region between the source electrode and the drain electrode;
a first passivation layer disposed above the second nitride-based semiconductor layer and above the gate structure;
a second passivation layer disposed above the first passivation layer and in the region between the source electrode and the drain electrode;
a field plate disposed above the second passivation layer and in the region between the source electrode and the drain electrode; and
a third passivation layer disposed above the field plate, wherein
the first passivation layer defines a bottom boundary of at least one enclosed air gap,
the second passivation layer defines a first side boundary of the at least one enclosed air gap,
the third passivation layer defines a second side boundary of the at least one enclosed air gap, and
the field plate defines a top boundary of the at least one enclosed air gap.
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