US 12,490,474 B2
Semiconductor device and semiconductor memory device
Hiroki Kawai, Aichi (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Mar. 2, 2023, as Appl. No. 18/177,751.
Claims priority of application No. 2022-099458 (JP), filed on Jun. 21, 2022.
Prior Publication US 2023/0411530 A1, Dec. 21, 2023
Int. Cl. H10D 30/67 (2025.01); H01L 23/528 (2006.01); H10B 12/00 (2023.01)
CPC H10D 30/6756 (2025.01) [H01L 23/5283 (2013.01); H10B 12/30 (2023.02); H10D 30/6735 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
an oxide semiconductor layer;
an oxide conductor layer on the oxide semiconductor layer;
a first oxide layer on the oxide conductor layer and comprising vanadium oxide; and
a metal wiring layer on the first oxide layer.