| CPC H10D 30/6755 (2025.01) [H10D 86/411 (2025.01); H10D 86/423 (2025.01); H10D 86/60 (2025.01); H10D 99/00 (2025.01)] | 21 Claims |
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1. A thin-film transistor comprising:
a light-shielding layer disposed on a substrate;
an oxygen supply layer disposed on the light-shielding layer, wherein the oxygen supply layer includes a metal oxide, and the light-shielding layer and the oxygen supply layer have a same patterned shape as each other in a plan view;
a buffer layer disposed on the substrate and covering the oxygen supply layer;
an active layer disposed on the buffer layer, wherein the active layer includes a channel area overlapping the light-shielding layer, and a first electrode area and a second electrode area respectively in contact with opposing sides of the channel area;
a gate insulating layer disposed on the channel area of the active layer;
a gate electrode disposed on the gate insulating layer;
an interlayer insulating layer disposed on the buffer layer and covering the active layer and the gate electrode, wherein a first electrode hole is defined through the interlayer insulating layer to overlap a portion of the first electrode area of the active layer; and
a first electrode disposed on the interlayer insulating layer and connected to the first electrode area of the active layer via the first electrode hole.
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