US 12,490,454 B2
Method of manufacturing semiconductor devices and semiconductor devices
Hsiao-Chun Chang, Hukou Township (TW); and Guan-Jie Shen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Mar. 6, 2024, as Appl. No. 18/597,813.
Application 17/712,998 is a division of application No. 16/654,470, filed on Oct. 16, 2019, granted, now 11,296,227, issued on Apr. 5, 2022.
Application 18/597,813 is a continuation of application No. 17/712,998, filed on Apr. 4, 2022, granted, now 11,961,911.
Prior Publication US 2024/0250173 A1, Jul. 25, 2024
Int. Cl. H10D 30/62 (2025.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H10D 30/01 (2025.01); H10D 62/00 (2025.01); H10D 62/13 (2025.01); H10D 62/17 (2025.01); H10D 64/01 (2025.01)
CPC H10D 30/62 (2025.01) [H01L 21/02532 (2013.01); H01L 21/02675 (2013.01); H01L 21/324 (2013.01); H10D 30/024 (2025.01); H10D 62/021 (2025.01); H10D 62/151 (2025.01); H10D 62/292 (2025.01); H10D 62/314 (2025.01); H10D 64/017 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a recrystallized fin disposed on a substrate extending in a first direction;
a conductive layer crossing over a first region of the fin and extending in a second direction;
a high-k dielectric layer extending in the second direction disposed between the conductive layer and fin; and
an epitaxial layer disposed over a second region of the fin on opposing sides of the conductive layer,
wherein the first region of the fin includes SiGe having a Ge concentration that has a peak in a range from 30 atomic % to 40 atomic % at a depth from a surface of fin and decreases from the depth toward a center of the first region, and wherein the Ge concentration at the surface of the first region ranges from 5 atomic % to 15 atomic %.