US 12,490,441 B2
Tunneling-based selectors incorporating van der Waals (vdW) materials
Minxian Zhang, Amherst, MA (US); and Ning Ge, Danville, CA (US)
Assigned to TetraMem Inc., San Jose, CA (US)
Filed by TetraMem Inc., Fremont, CA (US)
Filed on May 17, 2022, as Appl. No. 17/746,685.
Prior Publication US 2023/0380189 A1, Nov. 23, 2023
Int. Cl. H10B 63/00 (2023.01)
CPC H10B 63/20 (2023.02) 20 Claims
OG exemplary drawing
 
1. A selector, comprising:
a multilayer barrier structure fabricated between a first electrode and a second electrode, wherein the multilayer barrier structure comprises:
a first layer comprising a first van der Waals (vdW) material;
a second layer comprising a second vdW material; and
a third layer comprising a third vdW material, wherein a first electron affinity of the first layer comprising the first vdW material is lower than a second electron affinity of the second layer comprising the second vdW material and a third electron affinity of the third layer comprising the third vdW material.