US 12,490,382 B2
Coreless component carrier with embedded components
Allen Zhao, Chongqing (CN)
Assigned to AT&S Austria Technologie & Systemtechnik Aktiengesellschaft, Leoben (AT)
Filed by AT&S Austria Technologie & Systemtechnik Aktiengesellschaft, Leoben (AT)
Filed on Oct. 26, 2022, as Appl. No. 18/049,826.
Claims priority of application No. 202111248063.5 (CN), filed on Oct. 26, 2021.
Prior Publication US 2023/0128938 A1, Apr. 27, 2023
Int. Cl. H05K 1/18 (2006.01); H01L 21/48 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 25/065 (2023.01); H05K 1/03 (2006.01); H05K 3/46 (2006.01); H05K 3/00 (2006.01)
CPC H05K 1/186 (2013.01) [H01L 21/4857 (2013.01); H01L 21/6835 (2013.01); H01L 23/3121 (2013.01); H01L 23/49822 (2013.01); H01L 23/49838 (2013.01); H01L 23/49894 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 25/0655 (2013.01); H05K 1/0366 (2013.01); H05K 3/4682 (2013.01); H05K 3/4688 (2013.01); H01L 2221/68345 (2013.01); H01L 2224/19 (2013.01); H01L 2224/211 (2013.01); H01L 2224/221 (2013.01); H05K 3/0035 (2013.01); H05K 2201/0209 (2013.01); H05K 2201/0242 (2013.01); H05K 2203/1476 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A coreless component carrier, comprising:
a stack comprising at least one electrically conductive layer structure and several electrically insulating layer structures;
a component embedded in the stack;
wherein at least one of the electrically insulating layer structures, which is arranged at an outer main surface of the stack is a reinforced layer structure, and wherein only the at least one electrically insulating layer structure arranged at the outer main surface of the stack is the reinforced layer structure;
a recess formed in the stack, wherein the recess is defined by the electrically insulating layer structures such that the embedded component is entirely accommodated within the recess; and
a solder resist layer formed at an outer surface of the reinforced layer structure,
wherein the reinforced layer structure is located between the solder resist layer and another one of the several electrically insulating layer structures.