US 12,489,416 B2
Acoustic devices, structures and systems
Dariusz Burak, Fort Collins, CO (US); Kevin J. Grannen, Thornton, CO (US); and Jack Lenell, Fort Collins, CO (US)
Assigned to QXONIX INC., Irvine, CA (US)
Filed by Qxonix Inc., Irvine, CA (US)
Filed on Dec. 3, 2023, as Appl. No. 18/527,328.
Application 18/527,328 is a continuation of application No. 17/564,211, filed on Dec. 29, 2021, granted, now 11,870,415.
Application 17/564,211 is a continuation of application No. PCT/US2020/043720, filed on Jul. 27, 2020.
Claims priority of provisional application 62/881,087, filed on Jul. 31, 2019.
Claims priority of provisional application 62/881,074, filed on Jul. 31, 2019.
Claims priority of provisional application 62/881,077, filed on Jul. 31, 2019.
Claims priority of provisional application 62/881,061, filed on Jul. 31, 2019.
Claims priority of provisional application 62/881,085, filed on Jul. 31, 2019.
Claims priority of provisional application 62/881,091, filed on Jul. 31, 2019.
Claims priority of provisional application 62/881,094, filed on Jul. 31, 2019.
Prior Publication US 2024/0106411 A1, Mar. 28, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H03H 9/02 (2006.01); H03H 3/02 (2006.01); H03H 9/13 (2006.01); H03H 9/17 (2006.01); H03H 9/205 (2006.01); H03H 9/54 (2006.01); H03H 9/56 (2006.01)
CPC H03H 9/02259 (2013.01) [H03H 3/02 (2013.01); H03H 9/02015 (2013.01); H03H 9/0207 (2013.01); H03H 9/02102 (2013.01); H03H 9/0211 (2013.01); H03H 9/02157 (2013.01); H03H 9/13 (2013.01); H03H 9/131 (2013.01); H03H 9/17 (2013.01); H03H 9/173 (2013.01); H03H 9/175 (2013.01); H03H 9/205 (2013.01); H03H 9/54 (2013.01); H03H 9/568 (2013.01); H03H 2003/021 (2013.01); H03H 2009/02165 (2013.01)] 32 Claims
OG exemplary drawing
 
1. An acoustic millimeter wave device comprising:
a substrate;
a piezoelectric stack including at least a first piezoelectric layer and a second piezoelectric layer in which the first piezoelectric layer and the second piezoelectric layer have respective thicknesses to facilitate the acoustic millimeter wave device having a main resonant frequency in a millimeter wave band;
a top electrode;
a bottom electrode, in which the piezoelectric stack is coupled between the top electrode and the bottom electrode, and in which the top electrode and the bottom electrode are electrically and acoustically coupled with the first piezoelectric layer and the second piezoelectric layer; and
an active region associated with the piezoelectric stack, in which the active region includes at least where the top electrode and the bottom electrode overlap the first piezoelectric layer and the second piezoelectric layer to facilitate activating the acoustic millimeter wave device.