US 12,489,370 B2
Low power consumption feedback circuit for power supply device
Yu-Chao Lin, Hsinchu (TW); Kuan-Chun Fang, Hsinchu County (TW); Zhi-Yang Zhang, Tainan (TW); and Chien-Wei Kuan, Hsinchu County (TW)
Assigned to Power Forest Technology Corporation, Hsinchu County (TW)
Filed by Power Forest Technology Corporation, Hsinchu County (TW)
Filed on Aug. 8, 2023, as Appl. No. 18/366,707.
Claims priority of provisional application 63/521,856, filed on Jun. 19, 2023.
Claims priority of application No. 112126176 (TW), filed on Jul. 13, 2023.
Prior Publication US 2025/0023443 A1, Jan. 16, 2025
Int. Cl. H02M 3/335 (2006.01); H02M 1/00 (2007.01); H02M 3/00 (2006.01)
CPC H02M 3/33523 (2013.01) [H02M 1/0025 (2021.05); H02M 3/01 (2021.05)] 9 Claims
OG exemplary drawing
 
1. A feedback circuit for a power supply device, wherein the power supply device comprises a primary side circuit and a secondary side circuit, and the feedback circuit comprises:
a feedback voltage generation circuit, electrically connected to the secondary side circuit, and configured to receive a bias voltage and an output voltage of the power supply device and generate a feedback voltage according to the bias voltage and the output voltage;
a base voltage generation circuit, electrically connected to the feedback voltage generation circuit, and configured to provide a base voltage according to the feedback voltage; and
a compensation signal generation circuit, electrically connected to the feedback voltage generation circuit and a controller, and configured to generate a compensation signal according to the feedback voltage and the base voltage and provide the compensation signal to the controller in the primary side circuit,
wherein the feedback voltage generation circuit comprises:
a voltage division circuit, configured to divide the output voltage to generate a division voltage; and
a semiconductor element, wherein a first terminal of the semiconductor element receives the bias voltage, a second terminal of the semiconductor element is electrically connected to the base voltage generation circuit, and a control terminal of the semiconductor element receives the division voltage,
wherein a voltage value of the feedback voltage is lower than a voltage value of the bias voltage, and
the voltage value of the feedback voltage varies with a change of the output voltage.