US 12,489,066 B2
Electromagnetic interference shielding package structures and fabricating methods thereof
Peng Chen, Hubei (CN); and HouDe Zhou, Hubei (CN)
Assigned to Yangtze Memory Technologies Co., Ltd., Wuhan (CN)
Filed by Yangtze Memory Technologies Co., Ltd., Hubei (CN)
Filed on Jun. 23, 2022, as Appl. No. 17/847,327.
Application 17/847,327 is a continuation of application No. PCT/CN2021/098772, filed on Jun. 8, 2021.
Prior Publication US 2022/0392849 A1, Dec. 8, 2022
Int. Cl. H01L 23/552 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 25/00 (2006.01); H01L 25/18 (2023.01)
CPC H01L 23/552 (2013.01) [H01L 21/56 (2013.01); H01L 23/3128 (2013.01); H01L 24/05 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 24/92 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 2224/0233 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48147 (2013.01); H01L 2224/48225 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/92247 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a first die/die stack attached on a substrate;
a conductive top block including a conductive material, the conductive material attached to semiconductor material at a top surface of the first die/die stack; and
a plurality of ground wires conductively connecting the conductive top block to the substrate;
wherein the conductive top block, the plurality of ground wires, and the substrate form a Faraday cage to provide electromagnetic interference shielding to the first die/die stack.