| CPC H01L 23/5223 (2013.01) [H10D 86/85 (2025.01); H01L 23/5226 (2013.01)] | 17 Claims |
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1. A semiconductor device comprising:
a first bottom electrode and a second bottom electrode spaced apart from each other on a substrate;
a thick inter-metal dielectric layer disposed on the first and second bottom electrodes;
a first low bandgap dielectric layer and a second low bandgap dielectric layer overlapping the first bottom electrode and the second bottom electrode, respectively, and disposed on the thick inter-metal dielectric layer;
a first hard mask layer and a second hard mask layer disposed on the first low bandgap dielectric layer and the second low bandgap dielectric layer, respectively;
a first top electrode and a second top electrode disposed on the first hard mask layer and the second hard mask layer, respectively; and
a passivation layer disposed on the first and second top electrodes,
wherein the first and second low bandgap dielectric layers comprise materials different from a material of the thick inter-metal dielectric layer, and
wherein the first and second hard mask layers comprise materials different from the materials of the first and second low bandgap dielectric layers.
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