| CPC H01L 23/5223 (2013.01) [H01L 21/76816 (2013.01); H01L 21/76831 (2013.01); H10D 1/696 (2025.01); H10D 30/024 (2025.01); H10D 30/62 (2025.01); H10D 64/017 (2025.01)] | 20 Claims |
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1. A semiconductor device, comprising:
a semiconductor fin;
a gate structure disposed across the semiconductor fin;
a capacitor structure disposed on and in physical contact with the gate structure, wherein the capacitor structure comprises a ferroelectric layer, and a vertical projection of the capacitor structure lands on the semiconductor fin;
a conductive contact disposed on the capacitor structure, wherein the conductive contact is a single-layered structure;
a hard mask layer laterally surrounding the conductive contact, wherein the conductive contact protrudes from a top surface of the hard mask layer, and the conductive contact is in physical contact with the hard mask layer; and
a pair of spacers laterally surrounding the gate structure and the hard mask layer.
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