US 12,489,045 B2
Package structure with through vias
Ling-Wei Li, Hsinchu (TW); Jung-Hua Chang, Hsinchu (TW); and Cheng-Lin Huang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Feb. 28, 2024, as Appl. No. 18/589,531.
Application 18/589,531 is a continuation of application No. 18/157,509, filed on Jan. 20, 2023.
Application 18/157,509 is a continuation of application No. 16/893,119, filed on Jun. 4, 2020, granted, now 11,569,159, issued on Jan. 31, 2023.
Claims priority of provisional application 62/894,329, filed on Aug. 30, 2019.
Prior Publication US 2024/0203857 A1, Jun. 20, 2024
Int. Cl. H01L 21/56 (2006.01); H01L 21/48 (2006.01); H01L 21/683 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 25/10 (2006.01)
CPC H01L 23/49827 (2013.01) [H01L 21/4853 (2013.01); H01L 21/486 (2013.01); H01L 21/56 (2013.01); H01L 21/6835 (2013.01); H01L 23/3128 (2013.01); H01L 23/49816 (2013.01); H01L 23/49838 (2013.01); H01L 25/105 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2225/1023 (2013.01); H01L 2225/1058 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A package structure, comprising:
a conductive structure having a first portion and a second portion, wherein the first portion has a convex sidewall, the second portion has a vertical sidewall, and the second portion is wider than the first portion;
a semiconductor chip beside the conductive structure;
a protective layer laterally surrounding the conductive structure and the semiconductor chip, wherein the protective layer laterally covers the convex sidewall of the first portion and the vertical sidewall of the second portion, the protective layer has a first surface and a second surface opposite to the first surface, the first surface is level with a first end of the first portion of the conductive structure and, the second surface is level with a second end of the second portion of the conductive structure, and the protective layer is made of a polymer material dispersed with fillers; and
a conductive bump over the conductive structure, wherein a first symbolic tangent line of the convex sidewall of the first portion and a second symbolic tangent line of a surface of the conductive bump form an angle and meet at an interface between the conductive structure and the conductive bump, and the angle is in a range from about 30 degrees to about 60 degrees.