	US 12,488,991 B2
	Substrate processing method and substrate processing apparatus
Hiroki Murakami, Nirasaki (JP); Masanobu Matsunaga, Nirasaki (JP); and Yamato Tonegawa, Nirasaki (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Appl. No. 17/906,629
Filed by Tokyo Electron Limited, Tokyo (JP)
PCT Filed Mar. 17, 2021, PCT No. PCT/JP2021/010918 § 371(c)(1), (2) Date Sep. 19, 2022, PCT Pub. No. WO2021/193302, PCT Pub. Date Sep. 30, 2021.
Claims priority of application No. 2020-053329 (JP), filed on Mar. 24, 2020.
Prior Publication US 2023/0146375 A1, May 11, 2023
Int. Cl. H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01)

CPC H01L 21/31116 (2013.01) [H01J 37/3244 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01J 2237/334 (2013.01)]

14 Claims

1. A substrate processing method of etching a SiN film formed on a substrate, the substrate processing method comprising:

etching the SiN film by performing a cycle multiple times, and

wherein the cycle includes the following steps:

supplying a HF gas as an etchant gas to the substrate;

supplying a DCS gas to the substrate exposed to the HF gas;

supplying the HF gas to the substrate exposed to the DCS gas; and

supplying active species of plasma-excited NH₃gas to the substrate exposed to the HF gas.