US 12,488,984 B2
Plasma-assisted annealing system and method
Wei-Chen Tien, Chiayi (TW); Cheng-Yuan Hung, Kaohsiung (TW); Chang-Sin Ye, Tainan (TW); Chun-Kai Huang, Kaohsiung (TW); and Yii-Der Wu, Kaohsiung (TW)
Assigned to METAL INDUSTRIES RESEARCH & DEVELOPMENT CENTRE, Kaohsiung (TW)
Filed by METAL INDUSTRIES RESEARCH & DEVELOPMENT CENTRE, Kaohsiung (TW)
Filed on Dec. 12, 2022, as Appl. No. 18/079,069.
Claims priority of application No. 111133258 (TW), filed on Sep. 1, 2022.
Prior Publication US 2024/0079230 A1, Mar. 7, 2024
Int. Cl. H01L 21/02 (2006.01); H01J 37/32 (2006.01)
CPC H01L 21/0234 (2013.01) [H01J 37/32449 (2013.01); H01J 37/32522 (2013.01); H01J 37/32834 (2013.01); H01L 21/02178 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A plasma-assisted annealing system comprising:
a high temperature furnace including a gas inlet;
a plasma-induced dissociator including a working gas outlet, configured to dissociate a working gas and configured to exhaust a dissociated working gas from the working gas outlet; and
a connecting duct, both ends of the connecting duct are connected to the working gas outlet of the plasma-induced dissociator and the gas inlet of the high temperature furnace respectively, wherein the dissociated working gas in the plasma-induced dissociator is configured to be introduced into the high temperature furnace via the connecting duct.