US 12,488,981 B2
Systems and methods for deposition residue control
Abdul Aziz Khaja, San Jose, CA (US); and Anjana M. Patel, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Nov. 25, 2020, as Appl. No. 17/104,387.
Prior Publication US 2022/0165567 A1, May 26, 2022
Int. Cl. H01L 21/00 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/02274 (2013.01) [H01J 37/32091 (2013.01); H01J 37/32633 (2013.01); H01L 21/67017 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A semiconductor processing system, comprising:
a chamber body comprising sidewalls and a base;
a substrate support extending through the base of the chamber body, wherein the substrate support comprises a support platen and a stem;
a baffle extending about a stem of the substrate support, wherein:
a sidewall of the baffle extends vertically from the base of the chamber body along a length of the stem;
the baffle defines one or more apertures through the baffle; and
at least some apertures of the one or more apertures extend through a lateral surface of the sidewall of the baffle and are angled toward a surface of the base of the chamber body; and
a fluid source fluidly coupled with the chamber body at an access between the stem of the substrate support and the baffle.