US 12,488,980 B2
Selective thermal deposition method
Daniele Chiappe, Espoo (FI); Eva Tois, Espoo (FI); Viraj Madhiwala, Helsinki (FI); Marko Tuominen, Helsinki (FI); Anirudhan Chandrasekaran, Scottsdale, AZ (US); Andrea Illiberi, Leuven (BE); Shaoren Deng, Ghent (BE); Charles Dezelah, Helsinki (FI); Vincent Vandalon, Heverlee (BE); YongGyu Han, Seoul (KR); and Michael Givens, Oud-Heverlee (BE)
Assigned to ASM IP Holding, B.V., Almere (NL)
Filed by ASM IP Holding, B.V., Almere (NL)
Filed on Oct. 27, 2022, as Appl. No. 18/050,142.
Claims priority of provisional application 63/273,267, filed on Oct. 29, 2021.
Prior Publication US 2023/0140812 A1, May 4, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); C23C 16/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01)
CPC H01L 21/02164 (2013.01) [C23C 16/0272 (2013.01); C23C 16/401 (2013.01); C23C 16/45527 (2013.01); H01L 21/02211 (2013.01); H01L 21/0228 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A method of selectively depositing silicon and oxygen-comprising material on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process, the method comprising
providing a substrate in a reaction chamber;
providing a metal catalyst or metalloid catalyst into the reaction chamber in a vapor phase, wherein the catalyst is a compound comprising B, Zn, Mg, Al, Sn, or Ga;
providing a silicon precursor comprising an alkoxy silane compound into the reaction chamber in a vapor phase; and
providing an oxygen precursor comprising oxygen and hydrogen into the reaction chamber in vapor phase to form silicon and oxygen-comprising material on the first surface.