US 12,488,970 B2
Film forming apparatus and method of controlling film forming apparatus
Yasuhiko Kojima, Yamanashi (JP); Shota Ishibashi, Yamanashi (JP); and Toru Kitada, Yamanashi (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed on Jul. 11, 2023, as Appl. No. 18/350,400.
Claims priority of application No. 2022-114359 (JP), filed on Jul. 15, 2022.
Prior Publication US 2024/0021423 A1, Jan. 18, 2024
Int. Cl. H01J 37/34 (2006.01); C23C 14/34 (2006.01); C23C 14/35 (2006.01); C23C 14/50 (2006.01); H01J 37/32 (2006.01)
CPC H01J 37/3455 (2013.01) [C23C 14/3407 (2013.01); C23C 14/352 (2013.01); C23C 14/505 (2013.01); H01J 37/32715 (2013.01); H01J 37/3429 (2013.01); H01J 2237/332 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A film forming apparatus, comprising:
a first holder holding a first target formed of a first material;
a second holder holding a second target formed of a second material different from the first material;
a mounting table holding a substrate, the mounting table rotatable with a central axis of the mounting table as a rotation axis;
a first magnet that oscillates on a back surface side of the first holder; and
a second magnet that oscillates on a back surface side of the second holder; and
a controller that controls an oscillation of the first magnet and the second magnet,
wherein the controller includes a processor and a memory storing instructions thereon, the instructions when executed by the processor cause the processor to:
control an oscillation width of the first magnet and an oscillation of the second magnet such that, when an emission angle distribution of sputtered particles emitted from the first target is larger than an emission angle distribution of sputtered particles emitted from the second target, the oscillation width of the first magnet is smaller than the oscillation width of the second magnet to narrow a sputtering discharge region of the first target and to widen a sputtering discharge region of the second target.