US 12,488,968 B2
Semiconductor processing tool and methods of operation
Liang Yu Chen, Hsinchu (TW); Yu-Chi Lin, Hsinchu (TW); Yu Hsi Tang, Hsinchu (TW); and Chih-Teng Liao, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Apr. 22, 2022, as Appl. No. 17/660,249.
Prior Publication US 2023/0343567 A1, Oct. 26, 2023
Int. Cl. H01J 37/32 (2006.01); H01L 21/311 (2006.01)
CPC H01J 37/32834 (2013.01) [H01J 37/3244 (2013.01); H01J 37/32522 (2013.01); H01J 37/3299 (2013.01); H01J 2237/3343 (2013.01); H01L 21/31116 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
receiving a semiconductor substrate into a processing chamber; and
controlling a plasma-based etching operation performed within the processing chamber, wherein performing the plasma-based etching operation comprises:
receiving, by a controller of a flow-control subsystem, an indication of the plasma-based etching operation commencing in the processing chamber,
wherein the flow-control subsystem includes an impeller located below a chuck within the processing chamber and above an exhaust port exiting the processing chamber, and
wherein the chuck, the exhaust port, and the impeller share a central axis;
determining, by the controller, a setting of a motor component,
wherein the motor component is mechanically coupled to the impeller; and
transmitting, by the controller to the motor component, a signal to cause the motor component to rotate the impeller at a rotational velocity corresponding to the setting of the motor component.