| CPC H01J 37/32339 (2013.01) [H01J 37/32229 (2013.01); H01J 37/32532 (2013.01); H01J 2237/30405 (2013.01)] | 11 Claims |

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1. A plasma processing apparatus comprising:
a processing container;
a stage provided within the processing container;
an upper electrode provided above the stage, to interpose a space within the processing container;
a dielectric plate having a disk shape, provided above the stage and below the upper electrode, and including a central portion and a peripheral edge portion having a thickness greater than a thickness of the central portion, wherein the peripheral edge portion is an inlet configured to introduce high-frequency waves that are VHF waves or UHF waves toward a central axis of the processing container, the inlet being provided at an end of the space in a lateral direction and extending in a circumferential direction around the central axis; and
a waveguide device configured to supply the high-frequency waves to the inlet,
wherein the waveguide device includes a resonator that provides a waveguide,
the waveguide of the resonator extends in the circumferential direction around the central axis and extends in a direction in which the central axis extends to be connected to the inlet,
the waveguide includes one end and another end in the direction in which the central axis extends, and
the another end of the waveguide is connected to the inlet.
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