| CPC H01J 37/20 (2013.01) [C23C 14/14 (2013.01); C23C 14/3407 (2013.01); H01J 37/28 (2013.01); H01J 37/305 (2013.01); H01J 2237/081 (2013.01); H01J 2237/20214 (2013.01); H01J 2237/31749 (2013.01)] | 22 Claims |

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1. A sputtering target for a sample situated for charged particle beam milling in a charged-particle beam (CPB) instrument, comprising:
a conductive material defining an internal cavity adapted to receive the sample at a sample surface, the conductive material defining at least one window that provides a glancing angle CPB processing path to the sample surface as situated in the CPB instrument; and
a first sputterable material situated opposite the at least one window to define a CPB sputtering path through the at least one window to the first sputterable material.
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