US 12,488,940 B2
Electronic device including dielectric layer and method of manufacturing the electronic device
Woochul Lee, Suwon-si (KR); Cheheung Kim, Suwon-si (KR); Jiwoon Park, Suwon-si (KR); Jooho Lee, Suwon-si (KR); and Hojin Lee, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Oct. 2, 2023, as Appl. No. 18/479,747.
Claims priority of application No. 10-2022-0157507 (KR), filed on Nov. 22, 2022.
Prior Publication US 2024/0170214 A1, May 23, 2024
Int. Cl. H01G 4/12 (2006.01); H01G 4/008 (2006.01); H01G 4/30 (2006.01)
CPC H01G 4/1218 (2013.01) [H01G 4/008 (2013.01); H01G 4/306 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An electronic device comprising:
a first electrode;
a second electrode spaced apart from the first electrode;
a first dielectric layer between the first electrode and the second electrode;
a second dielectric layer between the first dielectric layer and the second electrode, the second dielectric layer having a rutile phase; and
a third dielectric layer between the second dielectric layer and the second electrode, at least one of the first dielectric layer or the third dielectric layer includes a material having an energy bandgap greater than an energy bandgap of a material included in the second dielectric layer,
wherein a thickness of the second dielectric layer is greater than a thickness of the first dielectric layer and a thickness of the third dielectric layer.