US 12,488,847 B2
Reviving faulty NAND by AI data modulation
Amit Berman, Binyamina (IL); Elisha Halperin, Ramat Gan (IL); Evgeny Blaichman, Tel-Aviv (IL); and Jonathan Zedaka, Jerusalem (IL)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Sep. 18, 2023, as Appl. No. 18/369,576.
Prior Publication US 2025/0095758 A1, Mar. 20, 2025
Int. Cl. G11C 16/34 (2006.01); G11C 11/54 (2006.01); G11C 16/10 (2006.01)
CPC G11C 16/3459 (2013.01) [G11C 11/54 (2013.01); G11C 16/102 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A storage system comprising:
a storage device comprising a plurality of memory cells; and
at least one processor configured to:
obtain a plurality of data symbols;
provide the plurality of data symbols to a neural network;
obtain a plurality of threshold voltage targets based on an output of the neural network; and
program the plurality of data symbols to the plurality of memory cells based on the plurality of threshold voltage targets.