US 12,488,840 B2
Memory system
Naomi Takeda, Yokohama Kanagawa (JP); and Masanobu Shirakawa, Chigasaki Kanagawa (JP)
Assigned to KIOXIA CORPORATION, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Jul. 17, 2023, as Appl. No. 18/222,640.
Claims priority of application No. 2022-143276 (JP), filed on Sep. 8, 2022.
Prior Publication US 2024/0127893 A1, Apr. 18, 2024
Int. Cl. G11C 16/26 (2006.01); G11C 16/34 (2006.01)
CPC G11C 16/26 (2013.01) [G11C 16/3418 (2013.01); G11C 16/3486 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A memory system comprising:
a non-volatile memory including a first sub-memory region, a second sub-memory region, a third sub-memory region, a fourth sub-memory region, and a fifth sub-memory region; and
a controller, wherein
each of the first sub-memory region, the second sub-memory region, the third sub-memory region, the fourth sub-memory region, and the fifth sub-memory region includes a plurality of memory cells, and
the controller is configured to:
calculate a first voltage corresponding to the first sub-memory region in first processing;
calculate a second voltage corresponding to the fourth sub-memory region in second processing after the first processing;
before the first processing, use a third voltage as a common voltage when reading data from each of the first sub-memory region, the second sub-memory region, the fourth sub-memory region, and the fifth sub-memory region, and use a fourth voltage corresponding to the third sub-memory region when reading data from the third sub-memory region;
after the first processing and before the second processing, use the first voltage when reading data from fifth voltage calculated by using the first voltage when reading data from each of the second sub-memory region, the fourth sub-memory region, and the fifth sub-memory region, and use the fourth voltage when reading data from the third sub-memory region; and
after the second processing, use the first voltage when reading data from the first sub-memory region, use as the common voltage a sixth voltage calculated by using the second voltage when reading data from each of the second sub-memory region and the fifth sub-memory region, use the fourth voltage when reading data from the third sub-memory region, and use the second voltage when reading data from the fourth sub-memory region.