US 12,487,916 B2
Read and write address translation using reserved memory pages for multi-page translation units
Meng Wei, Shanghai (CN)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Sep. 27, 2023, as Appl. No. 18/475,966.
Claims priority of application No. 202211389827.7 (CN), filed on Nov. 8, 2022.
Prior Publication US 2024/0152449 A1, May 9, 2024
Int. Cl. G06F 12/02 (2006.01); G06F 12/1009 (2016.01)
CPC G06F 12/023 (2013.01) 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
one or more components configured to:
identify a translation unit (TU) associated with a read command, wherein the TU includes multiple memory pages that span multiple memory planes of the memory device;
identify an initial memory page of the multiple memory pages of the TU based on a logical-to-physical mapping table, wherein the initial memory page is included in a first memory plane of the multiple memory planes;
identify one or more additional memory pages included in the multiple memory pages of the TU based on the initial memory page and based on an indication of one or more bad blocks of the memory device,
wherein the one or more additional memory pages are included in one or more additional memory planes of the multiple memory planes, and
wherein the one or more components, to identify the one or more additional memory pages of the TU, are configured to:
identify a first page index value that identifies the initial memory page;
determine, based on the indication of the one or more bad blocks of the memory device, a set of page index values that indicate a set of bad pages of the memory device;
identify a second page index value that is closest to the first page index value out of all page index values, included in the set of page index values, that are greater than the first page index value;
determine whether the second page index value is within an offset threshold of the first page index value; and
identify the one or more additional memory pages of the TU based on whether the second page index value is within the offset threshold of the first page index value; and
read data from the initial memory page and the one or more additional memory pages included in the TU.