US 12,487,527 B2
Photoresist developer and method of developing photoresist
An-Ren Zi, Hsinchu (TW); Chin-Hsiang Lin, Hsinchu (TW); Ching-Yu Chang, Yuansun Village (TW); and Yahru Cheng, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Apr. 10, 2024, as Appl. No. 18/631,832.
Application 18/631,832 is a continuation of application No. 17/717,984, filed on Apr. 11, 2022, granted, now 11,971,657.
Application 17/717,984 is a continuation of application No. 15/938,599, filed on Mar. 28, 2018, granted, now 11,300,878, issued on Apr. 12, 2022.
Claims priority of provisional application 62/585,255, filed on Nov. 13, 2017.
Prior Publication US 2024/0264526 A1, Aug. 8, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/32 (2006.01); G03F 7/004 (2006.01); G03F 7/038 (2006.01); H01L 21/027 (2006.01); H01L 21/47 (2006.01)
CPC G03F 7/0048 (2013.01) [G03F 7/038 (2013.01); G03F 7/0382 (2013.01); G03F 7/32 (2013.01); G03F 7/322 (2013.01); G03F 7/325 (2013.01); H01L 21/0273 (2013.01); H01L 21/47 (2013.01)] 20 Claims
 
1. A method of manufacturing a semiconductor device, comprising:
forming a resist layer on a substrate;
crosslinking one or more regions of the resist layer by selectively exposing the resist to actinic radiation; and
removing the one or more regions of the resist regions that were crosslinked by applying a liquid composition to the resist layer,
wherein the liquid composition comprises:
a solvent having Hansen solubility parameters of 15<δd<25, 10<δp<25, and 6<δh<30;
an acid selected from the group consisting of ethanedioic acid, methanoic acid, 2-hydroxypropanoic acid, 2-hydroxybutanedioic acid, citric acid, uric acid, trifluoromethanesulfonic acid, benzenesulfonic acid, ethanesulfonic acid, methanesulfonic acid, oxalic acid, maleic acid, carbonic acid, oxoethanoic acid, 2-hydroxyethanoic acid, propanedioic acid, butanedioic acid, 3-oxobutanoic acid, hydroxylamine-o-sulfonic acid, formamidinesulfinic acid, methylsulfamic acid, sulfoacetic acid, 1,1,2,2-tetrafluoroethanesulfonic acid, 1,3-propanedisulfonic acid, nonafluorobutane-1-sulfonic acid, 5-sulfosalicylic acid, nitric acid, sulfuric acid, hydrochloric acid, and combinations thereof; and
a chelate selected from a group consisting of ethylenediamine-N,N′-disuccinic acid (EDDS), diethylenetriaminepentaacetic acid (DTPA), polyaspartic acid, trans-1,2-cyclohexanediamine-N,N,N′,N′-tetraacetic acid monohydrate, and combinations thereof.