US 12,487,404 B2
Patterning method for photonic devices
Henrik Johansson, Wilton, NY (US)
Assigned to PSIQUANTUM CORP., Palo Alto, CA (US)
Appl. No. 17/995,147
Filed by PSIQUANTUM CORPORATION, Palo Alto, CA (US)
PCT Filed Mar. 30, 2021, PCT No. PCT/US2021/024772
§ 371(c)(1), (2) Date Sep. 30, 2022,
PCT Pub. No. WO2021/202445, PCT Pub. Date Oct. 7, 2021.
Claims priority of provisional application 63/002,957, filed on Mar. 31, 2020.
Prior Publication US 2023/0152520 A1, May 18, 2023
Int. Cl. G02B 6/136 (2006.01); G02B 6/12 (2006.01); H01L 21/311 (2006.01)
CPC G02B 6/136 (2013.01) [H01L 21/31122 (2013.01); H01L 21/31144 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12097 (2013.01); G02B 2006/12159 (2013.01); G02B 2006/12176 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A method for etching a wafer, comprising:
positioning the wafer inside a plasma etching chamber, wherein the wafer comprises a layer of barium titanate (BTO);
introducing a gas into the vacuum plasma etching chamber, wherein the gas comprises a mixture of hydrogen bromide (HBr) and chlorine (Cl2);
ionizing the HBr and the Cl2 to produce an ionized gas; and
etching the wafer by bombarding the layer of BTO with the ionized gas to pattern the layer of BTO.