| CPC G01N 21/8851 (2013.01) [B24B 9/065 (2013.01); H01L 21/304 (2013.01); H01L 21/67092 (2013.01); H01L 21/67288 (2013.01); H01L 22/12 (2013.01); G01N 2021/8861 (2013.01)] | 20 Claims |

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1. A method for processing semiconductor wafers, the method comprising:
providing a first semiconductor wafer processed by a front-end process tool;
obtaining measurement data of an edge profile of the first semiconductor wafer;
determining an edge profile center point based on the measurement data;
generating a raw height profile based on the measurement data and the edge profile center point;
generating an ideal edge profile based on polynomial regression of the raw height profile;
generating a Gapi edge profile of the first semiconductor wafer based on the raw height profile and the ideal edge profile;
calculating a Gapi edge value of the first semiconductor wafer based on the Gapi edge profile;
determining whether the Gapi edge value of the first semiconductor wafer is within a predetermined threshold;
if the Gapi edge value of the first semiconductor wafer is not within the predetermined threshold:
tuning the front-end process tool based on the Gapi edge profile of the first semiconductor wafer; and
processing a second semiconductor wafer with the tuned front-end process tool; and
if the Gapi edge value of the first semiconductor wafer is within the predetermined threshold, sorting the first semiconductor wafer for polishing.
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