US 12,487,135 B1
Flexible thin films pressure sensors applicable in hypergravity centrifugal environments
Haoran Fu, Hangzhou (CN); Guanwen Liang, Hangzhou (CN); Chengpeng Hong, Hangzhou (CN); Ying Wu, Hangzhou (CN); Zhehui Zhao, Hangzhou (CN); Zizhuang Yan, Hangzhou (CN); Bingjing Qiu, Hangzhou (CN); Chengbin Liu, Hangzhou (CN); Xuecheng Bian, Hangzhou (CN); Xia Tu, Hangzhou (CN); Yiting Lu, Hangzhou (CN); Daosheng Ling, Hangzhou (CN); Jianqun Jiang, Hangzhou (CN); and Yunmin Chen, Hangzhou (CN)
Assigned to ZHEJIANG UNIVERSITY, Hangzhou (CN)
Filed by ZHEJIANG UNIVERSITY, Zhejiang (CN)
Filed on Nov. 18, 2024, as Appl. No. 18/951,607.
Claims priority of application No. 202411050708.8 (CN), filed on Aug. 1, 2024.
Int. Cl. G01L 1/16 (2006.01)
CPC G01L 1/16 (2013.01) 10 Claims
OG exemplary drawing
 
1. A flexible thin film pressure sensor applicable in a hypergravity centrifugal environment, comprising a polyvinylidene fluoride (PVDF) nanowire composite thin film, two metal electrodes, and a flexible composite encapsulation layer; wherein
the PVDF nanowire composite thin film includes a PVDF matrix and a plurality of carbon nanowires filled within the PVDF matrix in a grid-like structure; the PVDF matrix includes a lower PVDF layer disposed directly below the carbon nanowires and an upper PVDF layer that is completely filled in grids of the carbon nanowires and disposed directly above the carbon nanowires, a thickness of the lower PVDF layer directly below the carbon nanowires is M1, which is equal to a thickness of a PVDF block, a diameter of the carbon nanowires is M2, a thickness of the upper PVDF layer completely filled in grids of the carbon nanowires and disposed directly above the carbon nanowires is M3, a total thickness M4 of the PVDF nanowire composite thin film is in a range from 10 μm to 50 μm, and a ratio of M1, M2, and M3 is 15:4:18;
the two metal electrodes are respectively fixed to two surfaces of the PVDF nanowire composite thin film and overlap with each other, and a region of the PVDF nanowire composite thin film located between the two metal electrodes is a polarized region;
the flexible composite encapsulation layer has a double-layer structure, two layers of the double-layered flexible composite encapsulation layer are disposed on the two surfaces of the PVDF nanowire composite thin film, respectively, and edge portions of the flexible composite encapsulation layer extend beyond the PVDF nanowire composite thin film and are adhesively fixed to each other, such that the PVDF nanowire composite thin film is encapsulated within the double-layered flexible composite encapsulation layer;
each layer of the double-layered flexible composite encapsulation layer is formed by laminating an upper polydimethylsiloxane (PDMS) layer, a silicon nitride film, a germanium-antimony-tellurium (GeSbTe) film, and a lower PDMS layer from top to bottom; the GeSbTe film has a double-layer structure, wherein each of an upper GeSbTe film and a lower GeSbTe film of the double-layered GeSbTe film is composed of a plurality of GeSbTe blocks; the upper GeSbTe film and the lower GeSbTe film form into a grid-like crossed structure, wherein a region between any two adjacent GeSbTe blocks of the upper GeSbTe film completely overlaps with a GeSbTe block of the lower GeSbTe film; the lower GeSbTe film extends and is wrapped into the lower PDMS layer, such that a region between any two adjacent GeSbTe blocks of the lower GeSbTe film is filled with PDMS; the region between any two adjacent GeSbTe blocks of the upper GeSbTe film is a hollow structure; in each layer of the double-layered flexible composite encapsulation layer, a bottom surface of the lower PDMS layer is disposed on one of the two surfaces of the PVDF nanowire composite thin film; and edge portions of the bottom surfaces of the lower PDMS layers of the two layers of the double-layered flexible composite encapsulation layer are adhesively fixed to each other.