US 12,486,597 B2
Apparatus and method for use with a substrate chamber
Li-Ting Wang, Hsinchu (TW); Jung-Jen Chen, Hsinchu (TW); Ming-Hua Yu, Hsinchu (TW); and Yee-Chia Yeo, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 10, 2023, as Appl. No. 18/447,493.
Application 18/447,493 is a division of application No. 17/377,581, filed on Jul. 16, 2021.
Prior Publication US 2023/0383435 A1, Nov. 30, 2023
Int. Cl. C30B 25/10 (2006.01); C30B 25/16 (2006.01)
CPC C30B 25/165 (2013.01) [C30B 25/10 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
adjusting a thickness of an epitaxial film growth in an epitaxial film growth chamber, wherein adjusting the thickness comprises:
measuring thermal radiation from a backside of a wafer that is supported on a rotating susceptor at a first plurality of locations using corresponding ones of a plurality of lower pyrometers to determine temperatures of the wafer at each of the first plurality of locations, wherein the epitaxial film growth is formed on the wafer, wherein the number of lower pyrometers of the plurality of lower pyrometers is equal to the number of locations of the first plurality of locations, wherein a width of a gap that is disposed between the backside of the wafer and a top surface of the rotating susceptor decreases continuously in a direction from a center of the wafer to an edge of the wafer, wherein a thickness of the rotating susceptor decreases continuously in a direction from a center of the rotating susceptor to an edge of the rotating susceptor, wherein a center portion of the rotating susceptor has a thickness that is greater than thicknesses of other portions of the rotating susceptor;
measuring thermal radiation from a frontside of the wafer at a second plurality of locations;
adjusting an output of heating sources in different regions of the epitaxial film growth chamber based on the temperatures of the wafer at each of the first plurality of locations, wherein heating sources in each region of the epitaxial film growth chamber have their output adjusted based on a temperature of the wafer at a corresponding one of the first plurality of locations;
combining values of the measured thermal radiation from the backside of the wafer with values of the measured thermal radiation from the frontside of the wafer;
determining thickness variations in the epitaxial film growth based on the combined values of the measured thermal radiation from the backside of the wafer and the frontside of the wafer; and
adjusting a flow rate of one or more precursors injected into the epitaxial film growth chamber based on the determined thickness variations.