US 12,486,596 B2
System and method of producing monocrystalline layers on a substrate
Lin Dong, Spånga (SE); Johan Peter Ekman, Saltsjöbaden (SE); and Kassem Alassaad, Järfälla (SE)
Assigned to KISELKARBID I STOCKHOLM AB, Kista (SE)
Appl. No. 18/549,018
Filed by KISELKARBID I STOCKHOLM AB, Kista (SE)
PCT Filed Feb. 18, 2022, PCT No. PCT/SE2022/050178
§ 371(c)(1), (2) Date Sep. 5, 2023,
PCT Pub. No. WO2022/191751, PCT Pub. Date Sep. 15, 2022.
Claims priority of application No. 2150283-6 (SE), filed on Mar. 11, 2021.
Prior Publication US 2024/0150930 A1, May 9, 2024
Int. Cl. C30B 23/06 (2006.01); C23C 14/24 (2006.01); C23C 14/50 (2006.01); C23C 14/06 (2006.01); C30B 29/36 (2006.01)
CPC C30B 23/06 (2013.01) [C23C 14/243 (2013.01); C23C 14/50 (2013.01); C23C 14/0635 (2013.01); C30B 29/36 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A system for producing an epitaxial monocrystalline layer on a substrate comprising:
an inner container defining a cavity for accommodating a source material and a substrate;
an insulation container arranged to accommodate the inner container therein;
an outer container arranged to accommodate the insulation container and the inner container therein; and
heating means arranged outside the outer container and configured to heat the cavity,
wherein the inner container comprises a support structure for supporting a solid monolithic source material at a predetermined distance above the substrate in the cavity such that a growth surface of the substrate is entirely exposed to the source material,
wherein the support structure comprises one or more first leg members having a first height (H1) and arranged to support the source material along a peripheral edge thereof, and one or more second leg members having a second height (H2) and arranged to support the substrate, wherein the first height (H1) is greater than the second height (H2).