	US 12,486,581 B2
	Cleaning composition with molybdenum etching inhibitor
Daniela White, Ridgefield, CT (US); Michael L. White, Ridgefield, CT (US); Youngmin Kim, Suwon-si (KR); Akshay Rajopadhye, Gainesville, FL (US); and Atanu K. Das, Danbury, CT (US)
Assigned to ENTEGRIS, INC., Billerica, MA (US)
Filed by ENTEGRIS, INC., Billerica, MA (US)
Filed on Jun. 8, 2023, as Appl. No. 18/207,569.
Claims priority of provisional application 63/350,219, filed on Jun. 8, 2022.
Prior Publication US 2023/0399754 A1, Dec. 14, 2023
Int. Cl. C23G 1/18 (2006.01); B81C 1/00 (2006.01); H01L 21/02 (2006.01)

CPC C23G 1/18 (2013.01) [B81C 1/00857 (2013.01); H01L 21/02057 (2013.01); B81C 2201/0133 (2013.01); B81C 2201/0142 (2013.01)]

6 Claims

1. A method of removing post-CMP residues from a surface of a microelectronic device comprising a molybdenum material, the method comprising:

i) contacting the surface of the microelectronic device with a removal composition comprising an aqueous base composition having a pH of greater than 10 comprising water and at least one of: an organic additive, a cleaning additive, a water-miscible organic solvent, and a pH adjustor,

wherein the removal composition further comprises at least one molybdenum etching inhibitor selected from the group consisting of:

(a) a pyridinium compound of Formula C:

R⁹—(C₅H₅N⁺)—R⁸X⁻ (C),

wherein R⁸is an alkyl group, R⁹is a substituted or unsubstituted, straight chain or branched alkyl or alkylene group, and X⁻ is an hydroxy ion, a halide ion, a sulfate ion, or a methanesulfonate ion, and

(b) a radical scavenger selected from the group consisting of an hydroxybenzene, a pyrazolinone, a compound having an aminoxyl radical, a gluconolactone, a tertiary alkyl alcohol, and ascorbic acid; and

ii) at least partially removing the post-CMP residue from the surface of the microelectronic device,

wherein the removal composition removes less of the molybdenum material from the surface of the microelectronic device than the aqueous base composition.