| CPC C23C 16/45551 (2013.01) [C23C 16/45519 (2013.01); C23C 16/4585 (2013.01); C23C 16/52 (2013.01)] | 19 Claims |

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1. A spatial atomic layer deposition apparatus comprising:
a depositor head having an active surface configured to discharge a flow of a first precursor gas, a flow of a second precursor gas, and a flow of an inert gas that separates the flow of the first precursor gas and the flow of the second precursor gas;
a substrate plate that opposes the depositor head, the substrate plate having a support surface that retains a build substrate, the support surface of the substrate plate being spaced apart from the active surface of the depositor head by a gap;
a linear motion stage that reciprocally moves the substrate plate relative to the depositor head;
a plurality of gap detection sensors supported on either the depositor head or the substrate plate, each of the gap detection sensors producing an output signal indicative of a distance between the active surface of the depositor head and the support surface of the substrate plate; and
a controller that communicates with the gap detection sensors and receives the output signal from each of the gap detection sensors,
wherein the controller is configured to determine a spatial orientation of the active surface of the depositor head and the support surface of the substrate plate based on the output signals received from the gap detection sensors.
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