US 12,486,570 B2
Film forming method and film forming apparatus
Takashi Matsumoto, Nirasaki (JP); and Ryota Ifuku, Nirasaki (JP)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Appl. No. 18/002,312
Filed by Tokyo Electron Limited, Tokyo (JP)
PCT Filed Jun. 11, 2021, PCT No. PCT/JP2021/022251
§ 371(c)(1), (2) Date Dec. 19, 2022,
PCT Pub. No. WO2021/261289, PCT Pub. Date Dec. 30, 2021.
Claims priority of application No. 2020-109733 (JP), filed on Jun. 25, 2020.
Prior Publication US 2023/0257871 A1, Aug. 17, 2023
Int. Cl. C23C 16/26 (2006.01); C01B 32/186 (2017.01); C23C 16/455 (2006.01); C23C 16/511 (2006.01)
CPC C23C 16/26 (2013.01) [C01B 32/186 (2017.08); C23C 16/45542 (2013.01); C23C 16/511 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A film forming method comprising:
an initial step of supplying a nitrogen-containing gas to a substrate provided with an underlayer film to form an adsorption site on a surface of the underlayer film;
a first step of supplying a first aromatic hydrocarbon gas having a first functional group to the substrate to adsorb the first aromatic hydrocarbon gas on the adsorption site;
a second step of activating the first aromatic hydrocarbon gas adsorbed on the adsorption site formed on the surface of the underlayer film by plasma of a first reaction gas that contains at least a rare gas, and
a third step of supplying a second aromatic hydrocarbon gas having a second functional group to the substrate after the first step and before the second step,
wherein, in the second step, the plasma of the first reaction gas activates the first aromatic hydrocarbon gas and the second aromatic hydrocarbon gas adsorbed on the adsorption site formed on the surface of the underlayer film,
wherein the second aromatic hydrocarbon gas is an aromatic hydrocarbon gas different from the first aromatic hydrocarbon gas, and
wherein the first reaction gas is a gas containing the rare gas and an acetylene gas.