| CPC C23C 14/54 (2013.01) [C23C 14/35 (2013.01); G06N 20/00 (2019.01)] | 20 Claims |

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1. A method of controlling a sputtering system, the method comprising:
monitoring a topography of a surface of a sputtering target using one or more time of flight cameras;
progressively modifying a deposition process parameter in relation to changes in the topography, wherein the deposition process parameter is one of a process duration, a pressure, a magnet position, a voltage for a power source, a frequency for a power source, a gas flow rate, a capacitance of a variable capacitor, or a temperature;
operating the sputtering system using the modified deposition process parameter;
wherein the one or more time of flight cameras comprise a plurality of time of flight cameras, each held at a distinct fixed location within a vacuum chamber of the sputtering system, and the method further comprises:
shielding the plurality of time of flight cameras from the sputtering target using a plurality of first substrates, wherein respective ones of the plurality of first substrates shield respective ones of the plurality of time of flight cameras;
removing the plurality of first substrates from the sputtering system;
placing a plurality of second substrates in the sputtering system; and
operating the sputtering system using the deposition process parameter while the plurality of second substrates shield the plurality of time of flight cameras from the sputtering target.
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