US 12,486,565 B2
Sputtering apparatus and control method
Shota Ishibashi, Nirasaki (JP); and Toru Kitada, Nirasaki (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed on Dec. 7, 2022, as Appl. No. 18/076,970.
Claims priority of application No. 2021-198867 (JP), filed on Dec. 7, 2021.
Prior Publication US 2023/0175114 A1, Jun. 8, 2023
Int. Cl. C23C 14/35 (2006.01); C23C 14/54 (2006.01)
CPC C23C 14/352 (2013.01) [C23C 14/54 (2013.01)] 2 Claims
OG exemplary drawing
 
1. A control method in a sputtering apparatus including a processing container, a first sputtering particle emission part including a first target provided inside the processing container and formed of a first material including W, a first target holder attached on a first inclined surface of the processing container to hold the first target, a first magnet arranged on a back surface side of the first target holder, and a first magnet scanning mechanism causing the first magnet to reciprocate along the first inclined surface, a second sputtering particle emission part including a second target provided inside the processing container and formed of a second material different from the first material, a second target holder attached on a second inclined surface of the processing container to hold the second target, a second magnet arranged on a back surface side of the second target holder, and a second magnet scanning mechanism causing the second magnet to reciprocate along the second inclined surface, a stage provided inside the processing container to place a substrate thereon, a shielding plate arranged between the first target and the second target, a drive mechanism configured to rotate the shielding plate, a suppressing gas supplier configured to supply a suppressing gas for suppressing deposition of sputtered particles sputtered from the first target on the shielding plate, and a suppressing gas introduction port installed in a first target side of the shielding plate and configured to supply the suppressing gas supplied from the suppressing gas supplier toward a first surface of the shielding plate facing the first target,
wherein the drive mechanism rotates the shielding plate so that the first surface of the shielding plate facing the first target and a second surface of the shielding plate facing the second target are reversed to laminate a film of the first material and a film of the second material on the shielding plate.