US 12,486,564 B2
Film forming apparatus and method for reducing arcing
Po-Wei Wang, Taichung (TW); and Chao-Hsing Lai, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jan. 5, 2024, as Appl. No. 18/406,062.
Application 18/406,062 is a continuation of application No. 18/108,866, filed on Feb. 13, 2023, granted, now 11,885,008.
Application 18/108,866 is a continuation of application No. 17/330,946, filed on May 26, 2021, granted, now 11,578,402, issued on Feb. 14, 2023.
Prior Publication US 2024/0183025 A1, Jun. 6, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 14/35 (2006.01); C23C 14/00 (2006.01); C23C 14/34 (2006.01); C23C 14/50 (2006.01); H01J 37/32 (2006.01); H01J 37/34 (2006.01)
CPC C23C 14/35 (2013.01) [C23C 14/0063 (2013.01); C23C 14/3407 (2013.01); C23C 14/50 (2013.01); H01J 37/3244 (2013.01); H01J 37/32449 (2013.01); H01J 37/3411 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A substrate processing system, comprising:
a chamber;
a target disposed within the chamber;
a magnetron disposed proximate the target; and
a first gas injector disposed at a sidewall of the chamber, the first gas injector having a gas outlet, wherein the first gas injector has a gas channel extending through a body of the first gas injector, and the gas channel comprises:
a first portion having a first diameter; and
a second portion disposed at an angle with respect to the first portion, wherein the second portion has a second diameter different than the first diameter and is in fluid communication with the first portion and the gas outlet, and the first gas injector is operable to rotate about a longitudinal center axis of the body of the first gas injector.