| CPC C11D 7/261 (2013.01) [C11D 7/268 (2013.01); H01L 21/02074 (2013.01); C11D 2111/22 (2024.01); H01L 21/3212 (2013.01)] | 20 Claims |
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1. A cleaning solution comprising:
chelator molecules configured to remove a layer of a conductive material from a surface of a bulk conductive material, wherein first inhibitor molecules on the surface of the conductive material are removed with the layer of the conductive material, and wherein the layer of the conductive material has a thickness of no more than one atom; and
encapsulant molecules configured to encapsulate the first inhibitor molecules, wherein the encapsulant molecules comprise ring-shaped molecules, and wherein the encapsulant molecules comprise pillararene molecules.
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8. A cleaning solution comprising:
chelator molecules configured to remove first inhibitor molecules from a surface of a conductive material;
encapsulant molecules configured to encapsulate the first inhibitor molecules, wherein the encapsulant molecules comprise calixarene molecules; and
second inhibitor molecules configured to bond with the first inhibitor molecules, wherein the second inhibitor molecules comprise aniline molecules.
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16. A chemical mechanical polishing cleaning solution comprising:
a chelator configured to remove an inhibitor from a surface of a conductive material; and
a plurality of carrier molecules comprising ring-shaped molecules having hydrophilic exteriors and hydrophobic interiors, the plurality of carrier molecules comprising a combination of pillararene, α-cyclodextrin, β-cyclodextrin, and γ-cyclodextrin, wherein relative concentrations of α-cyclodextrin, β-cyclodextrin, and γ-cyclodextrin included in the plurality of carrier molecules are based on a size of the inhibitor to encapsulate the inhibitor with the plurality of carrier molecules.
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