| CPC C02F 9/00 (2013.01) [B23K 26/53 (2015.10); B28D 5/0011 (2013.01); B23K 2103/56 (2018.08); C02F 1/004 (2013.01); C02F 1/32 (2013.01); C02F 1/36 (2013.01); C02F 1/42 (2013.01); C02F 1/444 (2013.01); C02F 2101/30 (2013.01); C02F 2103/04 (2013.01); C02F 2209/02 (2013.01); C02F 2301/046 (2013.01)] | 7 Claims |
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1. A wafer manufacturing method for manufacturing a wafer from an ingot, comprising:
a separation starting point forming step of forming a separation starting point by forming modified layers through irradiation of the ingot with a laser beam having a wavelength transmittable through the ingot with a focal point of the laser beam positioned at a depth from an end face of the ingot, the depth corresponding to a thickness of the wafer to be manufactured; and
a separation step of separating the wafer to be manufactured from the ingot, from the separation starting point,
wherein, in the separation step, deaerated water produced by a water production system is supplied to the end face of the ingot to form a layer of the deaerated water, and ultrasonic waves are applied to the ingot via the layer of the deaerated water, thereby disrupting the separation starting point, the water production system including a filter unit that filters water to produce clear water, an ultraviolet light irradiator that irradiates, with ultraviolet light, the clear water produced by the filter unit, thereby degrading organic matter in the clear water, an ion exchange resin unit that purifies the clear water, in which the organic matter has been degraded by the ultraviolet light irradiator, into pure water, and a deaerated water production unit that deaerates the pure water to produce the deaerated water, the deaerated water production unit including a chamber that receives the pure water and a depressurizer that reduces pressure in the chamber.
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