US 12,485,664 B2
Lamination apparatus and method
Yu-Ting Chiu, Hsinchu County (TW); Ying-Jui Huang, Hsinchu County (TW); Chien-Ling Hwang, Hsinchu (TW); and Ching-Hua Hsieh, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Feb. 8, 2023, as Appl. No. 18/165,933.
Prior Publication US 2024/0262096 A1, Aug. 8, 2024
Int. Cl. B29C 65/00 (2006.01); B32B 37/18 (2006.01); B29C 65/02 (2006.01); B29C 65/20 (2006.01); B29C 65/70 (2006.01); B29C 65/78 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01)
CPC B32B 37/18 (2013.01) [B29C 65/02 (2013.01); B29C 65/2076 (2013.01); B29C 65/70 (2013.01); B29C 65/7847 (2013.01); B29C 66/00145 (2013.01); B29C 66/472 (2013.01); B32B 2307/204 (2013.01); B32B 2307/538 (2013.01); B32B 2307/732 (2013.01); B32B 2309/02 (2013.01); B32B 2309/68 (2013.01); B32B 2319/00 (2013.01); B32B 2457/14 (2013.01); H01L 21/4853 (2013.01); H01L 21/568 (2013.01); H01L 24/19 (2013.01); H01L 24/83 (2013.01); H01L 25/50 (2013.01); H01L 2224/19 (2013.01); H01L 2224/8385 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for laminating a film to a wafer, comprising:
providing the wafer at a first side of a process chamber and the film at a second side of the chamber, the wafer and the film being separated from each other, wherein a plate and a jig around the plate are positioned at the second side of the chamber, and the film is positioned below the jig and the plate;
achieving a vacuum state and a process temperature in the process chamber; and
by moving the plate and the jig toward the first side, laminating the film to a surface of the wafer.